| ||
|
Nanopowders, Thin Films, and Devices | |
| ||
    
|
 |
 nGimat's RF wireless products result from its unique capability to deposit barium strontium titanate (BST) dielectric as nanostructured coatings on commercially viable sapphire substrates. Products under development include: 1) phase shifters that are designed to enable beam steering for wireless local area network (WLAN) systems for interference mitigation as well as for communications and radar applications, and 2) tunable filters that reduce size, save power, and improve flexibility for cell phones and other RF mobile devices. Historically, complex oxides in the RF domain, such as BST, have not been applied to commercial products due to the difficulty in producing high-quality thin films. nGimat has developed its proprietary CCVD process for depositing patented epitaxial BST dielectric coatings that provide the building blocks for a host of microwave and RF broadband devices. BST is a complex dielectric oxide material comprised of three different cation elements (as listed in the name). BST is valuable because of its ability to hold a large amount of electrical charge due to its high dielectric constant. BST has the unique ability to change its dielectric constant with an applied DC voltage, a significant benefit over existing dielectrics such as silicon dioxide. nGimat has also developed patented thin film structures and engineered nanomaterials that enable control voltages of less than 10v and mitigate intermodulation distortion. BST is a complex dielectric oxide material comprised of three different cation elements (as listed in the name). BST is valuable because of its ability to hold a large amount of electrical charge due to its high dielectric constant. BST has the unique ability to change its dielectric constant with an applied DC voltage, a significant benefit over existing dielectrics such as silicon dioxide. nGimat has also developed thin film structures and engineered nanomaterials that enable control voltages of less than 10v.  BST being deposited on 150mm sapphire wafer with nGimat's proprietary CCVD Process. nGimat's use of BST enables frequency-agile devices with superior electrical performance with regard to loss, noise and tunability. It has been known for at least 10 years that BST is a superior material as compared to silicon or GaAs in terms of its electrical properties, specifically its ability to change dielectric constant as a function of applied DC voltage. nGimat's significant advantage is the fact that the CCVD Process can deposit BST thin films at lower costs and with better material properties, due to additional nanolayers, compared to other manufacturing processes. nGimat Home |
 |